Characterization of novel memory devices based on nanostructured materials
An Al-rich Al2O3 thin film was deposited on a p-tpye silicon substrate by radio frequency sputtering to form Al/Al-rich Al2O3/p-Si MIS diode. The current-voltage(C-V) characteristics of the diodes were determined by carrier injection from either the silicon substrate or the Al gate and by carrier tr...
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Format: | Final Year Project |
Language: | English |
Published: |
2012
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Online Access: | http://hdl.handle.net/10356/49717 |
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Institution: | Nanyang Technological University |
Language: | English |
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