Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition

• Main Authors: Zhang, X. H., Chen, B. J., Chua, S. J., Dong, Zhili, Hu, Xiao, Tan, Swee Tiam, Sun, Xiaowei, Yong, Anna
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/95559; http://hdl.handle.net/10220/8276
• Institution: Nanyang Technological University

Zinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80K showed that the emission of QDs embedded film ranged from 3.0 to 3.6eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs.