A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures

• المؤلفون الرئيسيون: Helonde, J. B., Mhaisalkar, Subodh Gautam, Pete, D. J., Vairagar, A. V.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Electronic packaging materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96072; http://hdl.handle.net/10220/18150
• المؤسسة: Nanyang Technological University

Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolution observed during experimental in situ secondary-electron microscopy (SEM) investigations as well as in various other reported studies. The electromigration mechanism in Cu interconnect structures and differences in the peculiar electromigration-induced void evolution in various dual-inlaid Cu interconnect structures can be clearly understood based on this model. These findings warrant reinvestigation of technologically important electromigration mechanisms by developing rigorous models based on similar concepts.