A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures
Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at t...
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sg-ntu-dr.10356-960722020-06-01T10:13:57Z A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures Helonde, J. B. Mhaisalkar, Subodh Gautam Pete, D. J. Vairagar, A. V. School of Materials Science & Engineering DRNTU::Engineering::Materials::Electronic packaging materials Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolution observed during experimental in situ secondary-electron microscopy (SEM) investigations as well as in various other reported studies. The electromigration mechanism in Cu interconnect structures and differences in the peculiar electromigration-induced void evolution in various dual-inlaid Cu interconnect structures can be clearly understood based on this model. These findings warrant reinvestigation of technologically important electromigration mechanisms by developing rigorous models based on similar concepts. 2013-12-06T07:39:18Z 2019-12-06T19:25:15Z 2013-12-06T07:39:18Z 2019-12-06T19:25:15Z 2012 2012 Journal Article Pete, D. J., Helonde, J. B., Vairagar, A. V., & Mhaisalkar, S. G. (2012). A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures. Journal of electronic materials, 41(3), 568-572. https://hdl.handle.net/10356/96072 http://hdl.handle.net/10220/18150 10.1007/s11664-011-1855-y en Journal of electronic materials |
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DRNTU::Engineering::Materials::Electronic packaging materials Helonde, J. B. Mhaisalkar, Subodh Gautam Pete, D. J. Vairagar, A. V. A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures |
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Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolution observed during experimental in situ secondary-electron microscopy (SEM) investigations as well as in various other reported studies. The electromigration mechanism in Cu interconnect structures and differences in the peculiar electromigration-induced void evolution in various dual-inlaid Cu interconnect structures can be clearly understood based on this model. These findings warrant reinvestigation of technologically important electromigration mechanisms by developing rigorous models based on similar concepts. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Helonde, J. B. Mhaisalkar, Subodh Gautam Pete, D. J. Vairagar, A. V. |
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Article |
author |
Helonde, J. B. Mhaisalkar, Subodh Gautam Pete, D. J. Vairagar, A. V. |
author_sort |
Helonde, J. B. |
title |
A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures |
title_short |
A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures |
title_full |
A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures |
title_fullStr |
A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures |
title_full_unstemmed |
A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures |
title_sort |
model for understanding electromigration-induced void evolution in dual-inlaid cu interconnect structures |
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2013 |
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https://hdl.handle.net/10356/96072 http://hdl.handle.net/10220/18150 |
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1681058149884231680 |