Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxid...

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Bibliographic Details
Main Authors: Peng, Haiyang, Li, Yongfeng, Lin, Wei Nan, Wang, Yu Zhan, Gao, Xing Yu, Wu, Tom
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/96101
http://hdl.handle.net/10220/10084
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Institution: Nanyang Technological University
Language: English

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https://hdl.handle.net/10356/96101
http://hdl.handle.net/10220/10084

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