Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

10.1038/srep00442

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Bibliographic Details
Main Authors: Peng, H.Y., Li, Y.F., Lin, W.N., Wang, Y.Z., Gao, X.Y., Wu, T.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96206
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/96206

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