Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

• Main Authors: Peng, H.Y., Li, Y.F., Lin, W.N., Wang, Y.Z., Gao, X.Y., Wu, T.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/96206
• Institution: National University of Singapore

10.1038/srep00442