Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

• المؤلفون الرئيسيون: Peng, Haiyang, Li, Yongfeng, Lin, Wei Nan, Wang, Yu Zhan, Gao, Xing Yu, Wu, Tom
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96101; http://hdl.handle.net/10220/10084
• المؤسسة: Nanyang Technological University

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxid...