Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

• Main Authors: Peng, Haiyang, Li, Yongfeng, Lin, Wei Nan, Wang, Yu Zhan, Gao, Xing Yu, Wu, Tom
• 其他作者: School of Physical and Mathematical Sciences
• 格式: Article
• 語言: English
• 出版: 2013
• 在線閱讀: https://hdl.handle.net/10356/96101; http://hdl.handle.net/10220/10084

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxid...