Molecular length adjustment for organic azo-based nonvolatile ternary memory devices

Two conjugated small molecules with different molecular length, DPAPIT and DPAPPD, in which an electron donor dimethylamino moiety and an electron acceptor phthalimide core unit are bridged by another electron-accepting azobenzene block, were designed and synthesized. DPAPIT molecule with longer con...

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Main Authors: Miao, Shifeng, Li, Hua, Xu, Qing-Feng, Li, Najun, Zheng, Junwei, Sun, Ru, Lu, Jianmei, Li, Chang Ming
Other Authors: School of Chemical and Biomedical Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/96350
http://hdl.handle.net/10220/11538
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-963502020-03-07T11:35:36Z Molecular length adjustment for organic azo-based nonvolatile ternary memory devices Miao, Shifeng Li, Hua Xu, Qing-Feng Li, Najun Zheng, Junwei Sun, Ru Lu, Jianmei Li, Chang Ming School of Chemical and Biomedical Engineering DRNTU::Engineering::Chemical engineering Two conjugated small molecules with different molecular length, DPAPIT and DPAPPD, in which an electron donor dimethylamino moiety and an electron acceptor phthalimide core unit are bridged by another electron-accepting azobenzene block, were designed and synthesized. DPAPIT molecule with longer conjugation length stacked regularly in the solid state and formed uniform nanocrystalline film. The fabricated memory devices with DPAPIT as active material exhibited outstanding nonvolatile ternary memory effect with the current ratio of 1:101.7:104 for “0”, “1” and “2” states and all the switching threshold voltages lower than −3 V. In contrast, the shorter molecule DPAPPD showed amorphous microstructure and no obvious conductive switching behavior was observed in the device. The crystallinity and surface roughness of DPAPIT thin films were significantly improved as the annealing temperature increased, lowering the switching threshold voltages which are highly desirable for low-power consumption data-storage devices. It is worth noting that the tristable memory signals of DPAPIT film could also be achieved by using conductive atomic force microscopy with platinum-coated probe, which enables fabrication of nano-scale or even molecular-scale device, a significant progress for the ultra-high density data storage application. Mechanism analysis demonstrated that two charge traps with different depth in the molecular backbone were injected by charge carriers progressively as the external bias increased, resulting in the formation of three distinct conductive states (OFF, ON1 and ON2 states). 2013-07-16T04:20:52Z 2019-12-06T19:29:23Z 2013-07-16T04:20:52Z 2019-12-06T19:29:23Z 2012 2012 Journal Article Miao, S., Li, H., Xu, Q.-F., Li, N., Zheng, J., Sun, R., et al. (2012). Molecular length adjustment for organic azo-based nonvolatile ternary memory devices. Journal of Materials Chemistry, 22(32), 16582-16589. https://hdl.handle.net/10356/96350 http://hdl.handle.net/10220/11538 10.1039/c2jm32992a en Journal of materials chemistry © 2012 The Royal Society of Chemistry.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Chemical engineering
spellingShingle DRNTU::Engineering::Chemical engineering
Miao, Shifeng
Li, Hua
Xu, Qing-Feng
Li, Najun
Zheng, Junwei
Sun, Ru
Lu, Jianmei
Li, Chang Ming
Molecular length adjustment for organic azo-based nonvolatile ternary memory devices
description Two conjugated small molecules with different molecular length, DPAPIT and DPAPPD, in which an electron donor dimethylamino moiety and an electron acceptor phthalimide core unit are bridged by another electron-accepting azobenzene block, were designed and synthesized. DPAPIT molecule with longer conjugation length stacked regularly in the solid state and formed uniform nanocrystalline film. The fabricated memory devices with DPAPIT as active material exhibited outstanding nonvolatile ternary memory effect with the current ratio of 1:101.7:104 for “0”, “1” and “2” states and all the switching threshold voltages lower than −3 V. In contrast, the shorter molecule DPAPPD showed amorphous microstructure and no obvious conductive switching behavior was observed in the device. The crystallinity and surface roughness of DPAPIT thin films were significantly improved as the annealing temperature increased, lowering the switching threshold voltages which are highly desirable for low-power consumption data-storage devices. It is worth noting that the tristable memory signals of DPAPIT film could also be achieved by using conductive atomic force microscopy with platinum-coated probe, which enables fabrication of nano-scale or even molecular-scale device, a significant progress for the ultra-high density data storage application. Mechanism analysis demonstrated that two charge traps with different depth in the molecular backbone were injected by charge carriers progressively as the external bias increased, resulting in the formation of three distinct conductive states (OFF, ON1 and ON2 states).
author2 School of Chemical and Biomedical Engineering
author_facet School of Chemical and Biomedical Engineering
Miao, Shifeng
Li, Hua
Xu, Qing-Feng
Li, Najun
Zheng, Junwei
Sun, Ru
Lu, Jianmei
Li, Chang Ming
format Article
author Miao, Shifeng
Li, Hua
Xu, Qing-Feng
Li, Najun
Zheng, Junwei
Sun, Ru
Lu, Jianmei
Li, Chang Ming
author_sort Miao, Shifeng
title Molecular length adjustment for organic azo-based nonvolatile ternary memory devices
title_short Molecular length adjustment for organic azo-based nonvolatile ternary memory devices
title_full Molecular length adjustment for organic azo-based nonvolatile ternary memory devices
title_fullStr Molecular length adjustment for organic azo-based nonvolatile ternary memory devices
title_full_unstemmed Molecular length adjustment for organic azo-based nonvolatile ternary memory devices
title_sort molecular length adjustment for organic azo-based nonvolatile ternary memory devices
publishDate 2013
url https://hdl.handle.net/10356/96350
http://hdl.handle.net/10220/11538
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