Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition

• Main Authors: Tan, Yew Heng, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/96460; http://hdl.handle.net/10220/10290
• Institution: Nanyang Technological University

High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “three-step growth” approach in a reduced pressure chemical vapor deposition system. The growth steps consist of sequential low temperature (LT) at 400 °C, intermediate temperature ramp (LT-HT) of ~ 6.5 °...