Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature

Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature

Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device s...

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Bibliographic Details
Main Authors: Li, Hai, Yin, Zongyou, He, Qiyuan, Li, Hong, Huang, Xiao, Lu, Gang, Fam, Derrick Wen Hui, Zhang, Qing, Zhang, Hua, Tok, Alfred Iing Yoong
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/96604
http://hdl.handle.net/10220/10354
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Institution: Nanyang Technological University
Language: English
Description
Summary:Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.

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