Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature
Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device s...
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sg-ntu-dr.10356-966042020-06-01T10:13:34Z Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature Li, Hai Yin, Zongyou He, Qiyuan Li, Hong Huang, Xiao Lu, Gang Fam, Derrick Wen Hui Zhang, Qing Zhang, Hua Tok, Alfred Iing Yoong School of Materials Science & Engineering School of Electrical and Electronic Engineering Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm. 2013-06-13T07:22:59Z 2019-12-06T19:32:56Z 2013-06-13T07:22:59Z 2019-12-06T19:32:56Z 2012 2012 Journal Article Li, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., et al. (2012). Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature. Small, 8(1), 63-67. 1613-6829 https://hdl.handle.net/10356/96604 http://hdl.handle.net/10220/10354 10.1002/smll.201101016 en Small © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
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Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Li, Hai Yin, Zongyou He, Qiyuan Li, Hong Huang, Xiao Lu, Gang Fam, Derrick Wen Hui Zhang, Qing Zhang, Hua Tok, Alfred Iing Yoong |
| format |
Article |
| author |
Li, Hai Yin, Zongyou He, Qiyuan Li, Hong Huang, Xiao Lu, Gang Fam, Derrick Wen Hui Zhang, Qing Zhang, Hua Tok, Alfred Iing Yoong |
| spellingShingle |
Li, Hai Yin, Zongyou He, Qiyuan Li, Hong Huang, Xiao Lu, Gang Fam, Derrick Wen Hui Zhang, Qing Zhang, Hua Tok, Alfred Iing Yoong Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature |
| author_sort |
Li, Hai |
| title |
Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature |
| title_short |
Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature |
| title_full |
Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature |
| title_fullStr |
Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature |
| title_full_unstemmed |
Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature |
| title_sort |
fabrication of single- and multilayer mos2 film-based field-effect transistors for sensing no at room temperature |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/96604 http://hdl.handle.net/10220/10354 |
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1681057393567334400 |