Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature
Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device s...
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Main Authors: | , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Online Access: | https://hdl.handle.net/10356/96604 http://hdl.handle.net/10220/10354 |
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Institution: | Nanyang Technological University |
Language: | English |
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