Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature

• المؤلفون الرئيسيون: Li, Hai, Yin, Zongyou, He, Qiyuan, Li, Hong, Huang, Xiao, Lu, Gang, Fam, Derrick Wen Hui, Zhang, Qing, Zhang, Hua, Tok, Alfred Iing Yoong
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96604; http://hdl.handle.net/10220/10354

Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device s...