A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS

A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS

In this paper, a new field dependent effective mobility model including the drain-induced vertical field effect (DIVF) is presented to calculate the channel thermal noise of short channel MOSFETs operating at high frequencies. Based on the new channel thermal noise model, the simulated channel therm...

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書目詳細資料
Main Authors:	Ong, Shih Ni, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Chan, L. H. K., Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/96912 http://hdl.handle.net/10220/10377
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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