Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs

This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel MOSFETs. Based on the fundamental thermal noise theory, the channel thermal noise...

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Bibliographic Details
Main Authors: Ong, Shih Ni, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Chan, L. H. K., Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/96605
http://hdl.handle.net/10220/10320
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Institution: Nanyang Technological University
Language: English