Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs

• Main Authors: Ong, Shih Ni, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Chan, L. H. K., Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/96605; http://hdl.handle.net/10220/10320

This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel MOSFETs. Based on the fundamental thermal noise theory, the channel thermal noise...