Non-volatile 3D stacking RRAM-based FPGA

• المؤلفون الرئيسيون: Chen, Yi-Chung, Wang, Wenhua, Li, Hai, Zhang, Wei
• مؤلفون آخرون: School of Computer Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Computer science and engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96987; http://hdl.handle.net/10220/13024

We demonstrates a novel Field-Programmable Gate Array (FPGA) structure based on Resistive Random Access Memory (RRAM) system. RRAM is a non-volatile memory device which is compatible to CMOS Back End of Line (BEOL) process with only 4F2 area per cell. We use a 1R system memory for logic element, Loo...