Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

• Main Authors: Pey, Kin Leong, Lee, Pooi See, Mangelinck, D., Osipowitcz, T.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/97163; http://hdl.handle.net/10220/10518
• Institution: Nanyang Technological University

A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si sub...