Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si sub...

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Main Authors:	Pey, Kin Leong, Lee, Pooi See, Mangelinck, D., Osipowitcz, T.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Materials
Online Access:	https://hdl.handle.net/10356/97163 http://hdl.handle.net/10220/10518
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-97163
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spelling	sg-ntu-dr.10356-971632020-06-01T10:01:32Z Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T. School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Engineering::Materials A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed. 2013-06-21T02:55:16Z 2019-12-06T19:39:33Z 2013-06-21T02:55:16Z 2019-12-06T19:39:33Z 2003 2003 Journal Article Mangelinck, D., Lee, P. S., Osipowitcz, T., & Pey, K. L. (2004). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 215(3-4), 495-500. 0168-583X https://hdl.handle.net/10356/97163 http://hdl.handle.net/10220/10518 10.1016/j.nimb.2003.08.040 en Nuclear instruments and methods in Physics research Section B: beam interactions with materials and atoms © 2003 Elsevier B.V.
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials
spellingShingle	DRNTU::Engineering::Materials Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T. Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
description	A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T.
format	Article
author	Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T.
author_sort	Pey, Kin Leong
title	Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
title_short	Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
title_full	Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
title_fullStr	Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
title_full_unstemmed	Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
title_sort	analysis of laterally non-uniform layers and sub-micron devices by rutherford backscattering spectrometry
publishDate	2013
url	https://hdl.handle.net/10356/97163 http://hdl.handle.net/10220/10518
_version_	1681057566017191936

Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

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