Characterization of the junction leakage of Ti-capped Ni-silicided junctions

• Main Authors: Lee, Pooi See, Pey, Kin Leong, Toledo, N. G.
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/97235; http://hdl.handle.net/10220/10476

The junction leakage characteristics of Ti-capped nickel-silicided diodes are presented. Ti-capped Ni-silicided devices rapid thermal annealed (RTA) at 400 °C exhibit high sheet resistances and suffer from narrow line effect, which leads to the suspicion that the total phase transformation of NiSi h...