Characterization of the junction leakage of Ti-capped Ni-silicided junctions

• المؤلفون الرئيسيون: Lee, Pooi See, Pey, Kin Leong, Toledo, N. G.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97235; http://hdl.handle.net/10220/10476
• المؤسسة: Nanyang Technological University

The junction leakage characteristics of Ti-capped nickel-silicided diodes are presented. Ti-capped Ni-silicided devices rapid thermal annealed (RTA) at 400 °C exhibit high sheet resistances and suffer from narrow line effect, which leads to the suspicion that the total phase transformation of NiSi h...