Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation

• Main Authors: Mangelinck, D., Dai, J. Y., See, A., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: https://hdl.handle.net/10356/97263; http://hdl.handle.net/10220/10479
• Institution: Nanyang Technological University

The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.