Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation

• المؤلفون الرئيسيون: Mangelinck, D., Dai, J. Y., See, A., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97263; http://hdl.handle.net/10220/10479

The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stabi...