Investigation of turn-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric

• المؤلفون الرئيسيون: Nguyen, Chien A., Lee, Pooi See, Mhaisalkar, Subodh Gautam
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97267; http://hdl.handle.net/10220/10485
• المؤسسة: Nanyang Technological University

Large positive shifts of turn-on voltage Vto were observed in ferroelectric organic thin film transistor using P(VDF-TrFE) copolymer (57–43 mol%) as gate insulator during OFF to ON state sweeping. The shift of the transfer characteristic up to +25 V is attributed to the accumulation of mobile charge...