Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface
Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we...
Saved in:
Main Authors: | , , , , |
---|---|
其他作者: | |
格式: | Article |
語言: | English |
出版: |
2013
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/97419 http://hdl.handle.net/10220/11950 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |