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Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface

Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we...

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Main Authors: Panagopoulos, Christos, Eyvazov, A. B., Inoue, I. H., Stoliar, P., Rozenberg, M. J.
其他作者: School of Physical and Mathematical Sciences
格式: Article
語言:English
出版: 2013
主題:
在線閱讀:https://hdl.handle.net/10356/97419
http://hdl.handle.net/10220/11950
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機構: Nanyang Technological University
語言: English