Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface
Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we...
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/97419 http://hdl.handle.net/10220/11950 |
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Institution: | Nanyang Technological University |
Language: | English |