Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface

Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we...

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Bibliographic Details
Main Authors: Panagopoulos, Christos, Eyvazov, A. B., Inoue, I. H., Stoliar, P., Rozenberg, M. J.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/97419
http://hdl.handle.net/10220/11950
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Institution: Nanyang Technological University
Language: English