Thermal effects on LPCVD amorphous silicon
The effects of thermal annealing on amorphous silicon deposited using low-pressure chemical vapour deposition (LPCVD) are presented in this paper. The amorphous silicon film is being subjected to different annealing conditions ranging from 600 to 900 °C for a varying period of 30 to 90 min holding t...
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Main Authors: | , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/97442 http://hdl.handle.net/10220/10499 |
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Institution: | Nanyang Technological University |
Language: | English |
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