Ultrafine pitch (6-µm) evolution of Cu-Cu bonded interconnects in 3D wafer-on-wafer stacking

• المؤلفون الرئيسيون: Peng, L., Zhang, L., Li, H. Y., Fan, Ji, Lim, Dau Fatt, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97644; http://hdl.handle.net/10220/12069
• المؤسسة: Nanyang Technological University

In this paper, we successfully demonstrate ultrahigh density (>; 10^6 cm^-2) Cu-Cu interconnects of 6-μm pitch using wafer-on-wafer thermo-compression bonding. This is a significant improvement from our previous achievement of 15-μm pitch. In addition, we integrate Cu sealing frame with excellent...