A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode
A self-rectifying unipolar RRAM based on HfOx dielectrics using highly doped n-type germanium substrate as the bottom electrode is proposed for the first time. The RRAM cells exhibit a stable unipolar resistive switching behavior. Owning to Schottky barrier between defect states in HfOx layer and n-...
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| Main Authors: | , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2013
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/97684 http://hdl.handle.net/10220/13176 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | A self-rectifying unipolar RRAM based on HfOx dielectrics using highly doped n-type germanium substrate as the bottom electrode is proposed for the first time. The RRAM cells exhibit a stable unipolar resistive switching behavior. Owning to Schottky barrier between defect states in HfOx layer and n-Ge substrate, RRAM cells possess a self-rectifying behavior in LRS which eliminates the read-out errors induced by leakage current paths in cross-bar array structure. The demonstrated RRAM device shows high ON/OFF ratio (>5 × 102 @ 0.5 V), and its effective Schottky barrier height is also addressed. The demonstrated HfOx-based RRAM devices provide a promising candidate as non-volatile memory devices using Ge-based technology. |
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