Characteristics of a single-layer graphene field effect transistor with UV/ozone treatment
The performance of a single-layer graphene field effect transistor treated with UV/ozone at various temperatures is studied. It is observed that the number of the defects in graphene sheet increases with the UV/ozone treatment time, evidenced by Raman spectra. Moreover, the UV/ozone treatment dopes...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
2013
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| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/97792 http://hdl.handle.net/10220/13225 |
| الوسوم: |
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| المؤسسة: | Nanyang Technological University |
| اللغة: | English |
| الملخص: | The performance of a single-layer graphene field effect transistor treated with UV/ozone at various temperatures is studied. It is observed that the number of the defects in graphene sheet increases with the UV/ozone treatment time, evidenced by Raman spectra. Moreover, the UV/ozone treatment dopes graphene into p-type as the time increases, which is consistent with the electric transfer measurements. With the increase in the UV/ozone treatment time, the mobility of graphene transistor degrades, and the degradation accelerates with the increase in temperature. We further verified by XPS measurement that the oxygen related carbon group O=C-O formation is the main cause for the mobility degradation. |
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