Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconduc...

Full description

Saved in:
Bibliographic Details
Main Authors: Lee, Chun Wei, Weng, Cheng-Hui, Wei, Li, Chen, Yuan, Chan-Park, Mary B., Tsai, Chuen-Horng, Leou, Keh-Chyang, Poa, Patrick C. H., Wang, Junling, Li, Lain-Jong
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2011
Subjects:
DRNTU::Engineering::Materials::Nanostructured materials
Online Access:https://hdl.handle.net/10356/98287
http://hdl.handle.net/10220/7422
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic−aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by 1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.

Similar Items