Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

• Main Authors: Lee, Chun Wei, Weng, Cheng-Hui, Wei, Li, Chen, Yuan, Chan-Park, Mary B., Tsai, Chuen-Horng, Leou, Keh-Chyang, Poa, Patrick C. H., Wang, Junling, Li, Lain-Jong
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Nanostructured materials
• Online Access: https://hdl.handle.net/10356/98287; http://hdl.handle.net/10220/7422
• Institution: Nanyang Technological University

Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic−aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by 1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.