High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 0.15-µm gate were fabricated on a Si substrate with an 8-nm-thick AlGaN barrier. The device exhibited a unity current gain cutoff frequency fT of 63 GHz and maximum oscillation frequency fmax of 124 GHz. Its three-terminal OFF-state breakdo...

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Main Authors: Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:https://hdl.handle.net/10356/98334
http://hdl.handle.net/10220/25662
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-983342020-03-07T12:47:16Z High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon Ranjan, Kumud Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan School of Electrical and Electronic Engineering Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering::Semiconductors AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 0.15-µm gate were fabricated on a Si substrate with an 8-nm-thick AlGaN barrier. The device exhibited a unity current gain cutoff frequency fT of 63 GHz and maximum oscillation frequency fmax of 124 GHz. Its three-terminal OFF-state breakdown voltage BVgd is as high as 132 V. The estimated Johnson's figure of merit (=BVgd × fT) is 8.32 × 1012 V/s (8.32 THz·V), which is the highest value ever reported for a conventional SiN-passivated T-gate AlGaN/GaN HEMTs on a Si substrate without an additional field plate or gamma gate. 2015-05-25T03:19:37Z 2019-12-06T19:53:39Z 2015-05-25T03:19:37Z 2019-12-06T19:53:39Z 2014 2014 Journal Article Ranjan, K., Arulkumaran, S., Ng, G. I., & Vicknesh, S. (2014). High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon. Applied physics express, 7(4), 044102-. https://hdl.handle.net/10356/98334 http://hdl.handle.net/10220/25662 10.7567/APEX.7.044102 en Applied physics express © 2014 The Japan Society of Applied Physics.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Ranjan, Kumud
Arulkumaran, Subramaniam
Ng, Geok Ing
Vicknesh, Sahmuganathan
High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
description AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 0.15-µm gate were fabricated on a Si substrate with an 8-nm-thick AlGaN barrier. The device exhibited a unity current gain cutoff frequency fT of 63 GHz and maximum oscillation frequency fmax of 124 GHz. Its three-terminal OFF-state breakdown voltage BVgd is as high as 132 V. The estimated Johnson's figure of merit (=BVgd × fT) is 8.32 × 1012 V/s (8.32 THz·V), which is the highest value ever reported for a conventional SiN-passivated T-gate AlGaN/GaN HEMTs on a Si substrate without an additional field plate or gamma gate.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ranjan, Kumud
Arulkumaran, Subramaniam
Ng, Geok Ing
Vicknesh, Sahmuganathan
format Article
author Ranjan, Kumud
Arulkumaran, Subramaniam
Ng, Geok Ing
Vicknesh, Sahmuganathan
author_sort Ranjan, Kumud
title High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
title_short High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
title_full High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
title_fullStr High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
title_full_unstemmed High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
title_sort high johnson’s figure of merit (8.32 thz·v) in 0.15-µm conventional t-gate algan/gan hemts on silicon
publishDate 2015
url https://hdl.handle.net/10356/98334
http://hdl.handle.net/10220/25662
_version_ 1681036281143885824

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