High frequency drain current noise modeling in MOSFETs under sub-threshold condition
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measu...
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sg-ntu-dr.10356-983702019-12-06T19:54:20Z High frequency drain current noise modeling in MOSFETs under sub-threshold condition Chan, Lye Hock Yeo, Kiat Seng Chew, Kok Wai Johnny Ong, Shih Ni Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh School of Electrical and Electronic Engineering IEEE International Symposium on Integrated Circuits (12th : 2009 : Singapore) DRNTU::Engineering::Electrical and electronic engineering A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz. Published version 2010-05-11T01:02:02Z 2019-12-06T19:54:20Z 2010-05-11T01:02:02Z 2019-12-06T19:54:20Z 2009 2009 Conference Paper Chan, L. H., Yeo, K. S., Chew, K. W. J., Ong, S. N., Loo, X. S., Boon, C. C., & Do, M. A.(2009). Integrated Circuits, ISIC '09. In Proceedings of the 2009 12th International Symposium (pp.310-313) https://hdl.handle.net/10356/98370 http://hdl.handle.net/10220/6282 http://ieeexplore.ieee.org.ezlibproxy1.ntu.edu.sg/search/srchabstract.jsp?tp=&arnumber=5403709&queryText%3DHigh+Frequency+Drain+Current+Noise+Modeling+in+MOSFETs+under+Sub-Threshold+Condition%26openedRefinements%3D*%26searchField%3DSearch+All http://www.isic2009.org/ en © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 4 p. application/pdf |
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Nanyang Technological University |
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Singapore |
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English |
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DRNTU::Engineering::Electrical and electronic engineering |
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DRNTU::Engineering::Electrical and electronic engineering Chan, Lye Hock Yeo, Kiat Seng Chew, Kok Wai Johnny Ong, Shih Ni Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh High frequency drain current noise modeling in MOSFETs under sub-threshold condition |
| description |
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Chan, Lye Hock Yeo, Kiat Seng Chew, Kok Wai Johnny Ong, Shih Ni Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh |
| format |
Conference or Workshop Item |
| author |
Chan, Lye Hock Yeo, Kiat Seng Chew, Kok Wai Johnny Ong, Shih Ni Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh |
| author_sort |
Chan, Lye Hock |
| title |
High frequency drain current noise modeling in MOSFETs under sub-threshold condition |
| title_short |
High frequency drain current noise modeling in MOSFETs under sub-threshold condition |
| title_full |
High frequency drain current noise modeling in MOSFETs under sub-threshold condition |
| title_fullStr |
High frequency drain current noise modeling in MOSFETs under sub-threshold condition |
| title_full_unstemmed |
High frequency drain current noise modeling in MOSFETs under sub-threshold condition |
| title_sort |
high frequency drain current noise modeling in mosfets under sub-threshold condition |
| publishDate |
2010 |
| url |
https://hdl.handle.net/10356/98370 http://hdl.handle.net/10220/6282 http://ieeexplore.ieee.org.ezlibproxy1.ntu.edu.sg/search/srchabstract.jsp?tp=&arnumber=5403709&queryText%3DHigh+Frequency+Drain+Current+Noise+Modeling+in+MOSFETs+under+Sub-Threshold+Condition%26openedRefinements%3D*%26searchField%3DSearch+All http://www.isic2009.org/ |
| _version_ |
1681046305877524480 |