High frequency drain current noise modeling in MOSFETs under sub-threshold condition

High frequency drain current noise modeling in MOSFETs under sub-threshold condition

A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measu...

Saved in:

書目詳細資料
Main Authors:	Chan, Lye Hock, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Ong, Shih Ni, Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh
其他作者:	School of Electrical and Electronic Engineering
格式:	Conference or Workshop Item
語言:	English
出版:	2010
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/98370 http://hdl.handle.net/10220/6282 http://ieeexplore.ieee.org.ezlibproxy1.ntu.edu.sg/search/srchabstract.jsp?tp=&arnumber=5403709&queryText%3DHigh+Frequency+Drain+Current+Noise+Modeling+in+MOSFETs+under+Sub-Threshold+Condition%26openedRefinements%3D*%26searchField%3DSearch+All http://www.isic2009.org/
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

MOSFET drain current noise modeling with effective gate overdrive and junction noise
由: Chan, L. H. K., et al.
出版: (2013)

Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs
由: Ong, Shih Ni, et al.
出版: (2010)

Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
由: Ong, Shih Ni, et al.
出版: (2013)

A new unified model for channel thermal noise of deep sub-micron RFCMOS
由: Ong, Shih Ni, et al.
出版: (2010)

Analysis of the drain thermal noise for deep submicron MOSFETs
由: Ji, Y., et al.
出版: (2014)

A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
由: Ong, Shih Ni, et al.
出版: (2013)

Flicker noise fluctuations in deep submicron MOSFETs
由: Chew, Johnny Kok Wai
出版: (2010)

High frequency noise modeling of deep-submicron MOSFETs
由: Ong, Shih Ni
出版: (2015)

A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs
由: Dutta, Pradipta, et al.
出版: (2016)

Statistical noise margin estimation for sub-threshold combinational circuits
由: Pu, Y., et al.
出版: (2014)

A 3-8 GHz low-noise CMOS amplifier
由: Meaamar, Ali, et al.
出版: (2010)

A wideband low power low-noise amplifier in CMOS technology
由: Meaamar, Ali, et al.
出版: (2010)

A new millimeter-wave fixture deembedding method based on generalized cascade network model
由: Loo, Xi Sung, et al.
出版: (2013)

A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band
由: Do, Aaron V., et al.
出版: (2009)

A low power low phase noise dual-band multiphase VCO
由: Xie, Juan, et al.
出版: (2013)

RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
由: Boon, Chirn Chye, et al.
出版: (2009)

Determination of LDD MOSFET drain resistance from device simulation
由: Samudra, G.S., et al.
出版: (2014)

MOSFET noise modeling for wireless applications
由: Chen, Xuezhong.
出版: (2008)

n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport
由: Chui, K.-J., et al.
出版: (2014)

Schottky barrier source/drain n-mosfet using ytterbium silicide
由: ZHU, SHIYANG, et al.
出版: (2012)

Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
由: Liu, Wenhu, et al.
出版: (2014)

High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules
由: Han, G., et al.
出版: (2014)

N-type Schottky barrier source/drain MOSFET using Ytterbium silicide
由: Zhu, S., et al.
出版: (2014)

Source / Drain Engineering in InGaAs n-MOSFETs for Logic Device Applications
由: SUJITH SUBRAMANIAN
出版: (2014)

Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure
由: ZHANG QINGCHUN
出版: (2010)

Measuring and characterizing sub-micron MOSFETs
由: Lin, Hong.
出版: (2008)

De-embedding techniques for characterizing high frequency noise in nanometre CMOS devices
由: Loo, Xi Sung.
出版: (2012)

Design and implementation of asynchronous low power sub-threshold memory circuit
由: Khor, Boon Pin.
出版: (2009)

Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs
由: Dutta, Pradipta, et al.
出版: (2018)

Study of erbium disilicide and its application in Schottky source/drain silicon nanowire MOSFETs
由: Tan, Eu Jin
出版: (2010)

Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain
由: Lee, R.T.P., et al.
出版: (2014)

Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
由: Cheng, Zhi-Yuan, et al.
出版: (2014)

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
由: Wang, G.H., et al.
出版: (2014)

Schottky-barrier si nanowire mosfet: Effects of source/drain metals and gate dielectrics
由: Yang, W., et al.
出版: (2014)

Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
由: Ang, K.W., et al.
出版: (2014)

Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors
由: Ang, K.-W., et al.
出版: (2014)

High frequency noise in deep-submicrometer silicon mosfets
由: Su, Hao
出版: (2011)

Low noise RF MOSFETs on flexible plastic substrates
由: Kao, H.L., et al.
出版: (2014)

An inverted ring oscillator noise-shaping time-to-digital converter with in-band noise reduction and coherent noise cancellation
由: Yi, Xiang, et al.
出版: (2020)

A low-noise amplifier with continuously-tuned input matching frequency and output resonance frequency
由: Zhu, Xi, et al.
出版: (2013)