Crystalline silicon surface passivation by intrinsic silicon thin films deposited by low-frequency inductively coupled plasma

• Main Authors: Zhou, H. P., Wei, D. Y., Xu, S., Xiao, S. Q., Xu, L. X., Huang, S. Y., Guo, Y. N., Khan, S., Xu, M.
• Other Authors: Institute of Advanced Studies
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98383; http://hdl.handle.net/10220/12073
• Institution: Nanyang Technological University

Amorphous and microcrystal hydrogenated intrinsic silicon (a-Si:H/μc-Si:H) thin films with good silicon surface passivation effect were deposited using a precursor gases of silane and hydrogen, which were discharged by low frequency inductively coupled high density plasma source. With regard to sili...