Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding

Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing(500°C) for a short time (<5h) , the bond strength of these two low-temperature methods is improved as compared...

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Bibliographic Details
Main Authors: Tan, Cher Ming, Yu, Weibo, Wei, Jun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/98498
http://hdl.handle.net/10220/17368
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Institution: Nanyang Technological University
Language: English
Description
Summary:Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing(500°C) for a short time (<5h) , the bond strength of these two low-temperature methods is improved as compared to the conventional air wafer bonding. The bond efficiency of MVWB is found to be better than the conventional air wafer bonding, but PAWB contains more bubbles. The qualitative mechanisms of these two low-temperature wafer bonding methods are proposed.