Low temperature direct wafer bonding of GaAs to Si via plasma activation

• Main Authors: Xu, D. W., Fitzgerald, Eugene A., Yeo, Chiew Yong, Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/100308; http://hdl.handle.net/10220/18646
• Institution: Nanyang Technological University

The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions o...