Low temperature direct wafer bonding of GaAs to Si via plasma activation
The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions o...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100308 http://hdl.handle.net/10220/18646 |
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| Institution: | Nanyang Technological University |
| Language: | English |