Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding

Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding

Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing(500°C) for a short time (<5h) , the bond strength of these two low-temperature methods is improved as compared...

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Main Authors: Tan, Cher Ming, Yu, Weibo, Wei, Jun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering
Online Access:https://hdl.handle.net/10356/98498
http://hdl.handle.net/10220/17368
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-984982020-03-07T14:00:30Z Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding Tan, Cher Ming Yu, Weibo Wei, Jun School of Electrical and Electronic Engineering DRNTU::Engineering Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing(500°C) for a short time (<5h) , the bond strength of these two low-temperature methods is improved as compared to the conventional air wafer bonding. The bond efficiency of MVWB is found to be better than the conventional air wafer bonding, but PAWB contains more bubbles. The qualitative mechanisms of these two low-temperature wafer bonding methods are proposed. Published version 2013-11-07T06:21:17Z 2019-12-06T19:56:10Z 2013-11-07T06:21:17Z 2019-12-06T19:56:10Z 2006 2006 Journal Article Tan, C. M., Yu, W., & Wei, J. (2006). Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding. Applied Physics Letters, 88(11), 114102. 0003-6951 https://hdl.handle.net/10356/98498 http://hdl.handle.net/10220/17368 10.1063/1.2185467 en Applied physics letters © 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.2185467].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering
spellingShingle DRNTU::Engineering
Tan, Cher Ming
Yu, Weibo
Wei, Jun
Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
description Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing(500°C) for a short time (<5h) , the bond strength of these two low-temperature methods is improved as compared to the conventional air wafer bonding. The bond efficiency of MVWB is found to be better than the conventional air wafer bonding, but PAWB contains more bubbles. The qualitative mechanisms of these two low-temperature wafer bonding methods are proposed.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tan, Cher Ming
Yu, Weibo
Wei, Jun
format Article
author Tan, Cher Ming
Yu, Weibo
Wei, Jun
author_sort Tan, Cher Ming
title Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
title_short Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
title_full Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
title_fullStr Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
title_full_unstemmed Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
title_sort comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
publishDate 2013
url https://hdl.handle.net/10356/98498
http://hdl.handle.net/10220/17368
_version_ 1681042465608433664

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