Thermal oxidation of Ni films for p-type thin-film transistors

• Main Authors: Wang, Xinghui, Zhang, Qing, Jiang, Jie, Li, Jingqi, Zhang, X. X.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98646; http://hdl.handle.net/10220/17456
• Institution: Nanyang Technological University

p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on–off ratio are found to be 5.2 cm2 V−1 s−1 and 2.2 × 103, respectively. X-ray diffractio...