Thermal oxidation of Ni films for p-type thin-film transistors

p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on–off ratio are found to be 5.2 cm2 V−1 s−1 and 2.2 × 103, respectively. X-ray diffractio...

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Bibliographic Details
Main Authors: Wang, Xinghui, Zhang, Qing, Jiang, Jie, Li, Jingqi, Zhang, X. X.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/98646
http://hdl.handle.net/10220/17456
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Institution: Nanyang Technological University
Language: English

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