Flexible write-once–read-many-times memory device based on a nickel oxide thin film
A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) w...
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| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/98819 http://hdl.handle.net/10220/13467 |
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sg-ntu-dr.10356-988192020-03-07T14:02:46Z Flexible write-once–read-many-times memory device based on a nickel oxide thin film Yu, Q. Liu, Y. Liu, Z. Yu, Y. F. Lei, H. W. Zhu, J. Chen, Tupei Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. 2013-09-13T02:56:03Z 2019-12-06T19:59:58Z 2013-09-13T02:56:03Z 2019-12-06T19:59:58Z 2012 2012 Journal Article Yu, Q., Liu, Y., Chen, T., Liu, Z., Yu, Y. F., Lei, H. W., et al. (2012). Flexible write-once–read-many-times memory device based on a nickel oxide thin film. IEEE transactions on electron devices, 59(3), 858-862. 0018-9383 https://hdl.handle.net/10356/98819 http://hdl.handle.net/10220/13467 10.1109/TED.2011.2179939 en IEEE transactions on electron devices © 2012 IEEE |
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DRNTU::Engineering::Electrical and electronic engineering Yu, Q. Liu, Y. Liu, Z. Yu, Y. F. Lei, H. W. Zhu, J. Chen, Tupei Fung, Stevenson Hon Yuen Flexible write-once–read-many-times memory device based on a nickel oxide thin film |
| description |
A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Yu, Q. Liu, Y. Liu, Z. Yu, Y. F. Lei, H. W. Zhu, J. Chen, Tupei Fung, Stevenson Hon Yuen |
| format |
Article |
| author |
Yu, Q. Liu, Y. Liu, Z. Yu, Y. F. Lei, H. W. Zhu, J. Chen, Tupei Fung, Stevenson Hon Yuen |
| author_sort |
Yu, Q. |
| title |
Flexible write-once–read-many-times memory device based on a nickel oxide thin film |
| title_short |
Flexible write-once–read-many-times memory device based on a nickel oxide thin film |
| title_full |
Flexible write-once–read-many-times memory device based on a nickel oxide thin film |
| title_fullStr |
Flexible write-once–read-many-times memory device based on a nickel oxide thin film |
| title_full_unstemmed |
Flexible write-once–read-many-times memory device based on a nickel oxide thin film |
| title_sort |
flexible write-once–read-many-times memory device based on a nickel oxide thin film |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/98819 http://hdl.handle.net/10220/13467 |
| _version_ |
1681047577100812288 |