Flexible write-once–read-many-times memory device based on a nickel oxide thin film

Flexible write-once–read-many-times memory device based on a nickel oxide thin film

A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) w...

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Main Authors: Yu, Q., Liu, Y., Liu, Z., Yu, Y. F., Lei, H. W., Zhu, J., Chen, Tupei, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98819
http://hdl.handle.net/10220/13467
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-988192020-03-07T14:02:46Z Flexible write-once–read-many-times memory device based on a nickel oxide thin film Yu, Q. Liu, Y. Liu, Z. Yu, Y. F. Lei, H. W. Zhu, J. Chen, Tupei Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. 2013-09-13T02:56:03Z 2019-12-06T19:59:58Z 2013-09-13T02:56:03Z 2019-12-06T19:59:58Z 2012 2012 Journal Article Yu, Q., Liu, Y., Chen, T., Liu, Z., Yu, Y. F., Lei, H. W., et al. (2012). Flexible write-once–read-many-times memory device based on a nickel oxide thin film. IEEE transactions on electron devices, 59(3), 858-862. 0018-9383 https://hdl.handle.net/10356/98819 http://hdl.handle.net/10220/13467 10.1109/TED.2011.2179939 en IEEE transactions on electron devices © 2012 IEEE
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Yu, Q.
Liu, Y.
Liu, Z.
Yu, Y. F.
Lei, H. W.
Zhu, J.
Chen, Tupei
Fung, Stevenson Hon Yuen
Flexible write-once–read-many-times memory device based on a nickel oxide thin film
description A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yu, Q.
Liu, Y.
Liu, Z.
Yu, Y. F.
Lei, H. W.
Zhu, J.
Chen, Tupei
Fung, Stevenson Hon Yuen
format Article
author Yu, Q.
Liu, Y.
Liu, Z.
Yu, Y. F.
Lei, H. W.
Zhu, J.
Chen, Tupei
Fung, Stevenson Hon Yuen
author_sort Yu, Q.
title Flexible write-once–read-many-times memory device based on a nickel oxide thin film
title_short Flexible write-once–read-many-times memory device based on a nickel oxide thin film
title_full Flexible write-once–read-many-times memory device based on a nickel oxide thin film
title_fullStr Flexible write-once–read-many-times memory device based on a nickel oxide thin film
title_full_unstemmed Flexible write-once–read-many-times memory device based on a nickel oxide thin film
title_sort flexible write-once–read-many-times memory device based on a nickel oxide thin film
publishDate 2013
url https://hdl.handle.net/10356/98819
http://hdl.handle.net/10220/13467
_version_ 1681047577100812288

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