Flexible write-once–read-many-times memory device based on a nickel oxide thin film

• Main Authors: Yu, Q., Liu, Y., Liu, Z., Yu, Y. F., Lei, H. W., Zhu, J., Chen, Tupei, Fung, Stevenson Hon Yuen
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/98819; http://hdl.handle.net/10220/13467

A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) w...