Flexible write-once–read-many-times memory device based on a nickel oxide thin film
A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) w...
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Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/98819 http://hdl.handle.net/10220/13467 |
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Institution: | Nanyang Technological University |
Language: | English |
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