Flexible write-once–read-many-times memory device based on a nickel oxide thin film

• المؤلفون الرئيسيون: Yu, Q., Liu, Y., Liu, Z., Yu, Y. F., Lei, H. W., Zhu, J., Chen, Tupei, Fung, Stevenson Hon Yuen
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98819; http://hdl.handle.net/10220/13467
• المؤسسة: Nanyang Technological University

A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) w...