N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

• Main Authors: Ivana, Subramanian, Sujith, Owen, Man Hon Samuel, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Yeo, Yee-Chia
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98835; http://hdl.handle.net/10220/12545
• Institution: Nanyang Technological University

InGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni–InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm·tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique.