Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

• Main Authors: Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98937; http://hdl.handle.net/10220/13454
• Institution: Nanyang Technological University

An effective suppression of drain current collapse was realized in both Enhancement (E)-mode and Depletion (D)-mode AlGaN/GaN High-electron-mobility-transistors (HEMTs) on 4-inch Silicon (111) by ammonium sulfide [(NH4)2Sx] passivation. The current collapse was studied using the pulsed current-voltage characteristics with the pulse width of 200 ns and pulse period of 1 ms. With reference to the AlGaN/GaN HEMTs without sulfur passivation, about 30% of the drain current collapse was suppressed for drain quiescent biases of 25 to 30 V. Obtaining low current collapse is essential to demonstrate high power GaN HEMTs.