Charge injection at carbon nanotube-SiO2 interface
Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied...
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sg-ntu-dr.10356-992082023-07-14T15:50:28Z Charge injection at carbon nanotube-SiO2 interface Ong, Hock Guan Cheah, Jun Wei Chen, Lang TangTang, Hosea Xu, Yanping Li, Bing Zhang, Hua Li, Lain-Jong Wang, Junling School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube-SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface. Published version 2011-07-05T08:29:04Z 2019-12-06T20:04:40Z 2011-07-05T08:29:04Z 2019-12-06T20:04:40Z 2008 2008 Journal Article Ong, H. G., Cheah, J. W., Chen, L., TangTang, H., Xu, Y., Li, B., et al. (2008). Charge injection at carbon nanotube-SiO2 interface. Applied Physics Letters, 93(9), 093509. https://hdl.handle.net/10356/99208 http://hdl.handle.net/10220/6859 10.1063/1.2978249 en Applied physics letters © 2008 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2978249. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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DRNTU::Engineering::Materials::Nanostructured materials Ong, Hock Guan Cheah, Jun Wei Chen, Lang TangTang, Hosea Xu, Yanping Li, Bing Zhang, Hua Li, Lain-Jong Wang, Junling Charge injection at carbon nanotube-SiO2 interface |
| description |
Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube-SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Ong, Hock Guan Cheah, Jun Wei Chen, Lang TangTang, Hosea Xu, Yanping Li, Bing Zhang, Hua Li, Lain-Jong Wang, Junling |
| format |
Article |
| author |
Ong, Hock Guan Cheah, Jun Wei Chen, Lang TangTang, Hosea Xu, Yanping Li, Bing Zhang, Hua Li, Lain-Jong Wang, Junling |
| author_sort |
Ong, Hock Guan |
| title |
Charge injection at carbon nanotube-SiO2 interface |
| title_short |
Charge injection at carbon nanotube-SiO2 interface |
| title_full |
Charge injection at carbon nanotube-SiO2 interface |
| title_fullStr |
Charge injection at carbon nanotube-SiO2 interface |
| title_full_unstemmed |
Charge injection at carbon nanotube-SiO2 interface |
| title_sort |
charge injection at carbon nanotube-sio2 interface |
| publishDate |
2011 |
| url |
https://hdl.handle.net/10356/99208 http://hdl.handle.net/10220/6859 |
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1772825296466083840 |